Bottom-contact tetracene light-emitting transistors employing a mercaptosilane derivative self-assembled monolayer as adhesive between gold concentric interdigitated source/drain electrodes and SiO2 gate dielectric are described. Devices that employ the mercaptosilane adhesive have a higher mobility and electroluminescence compared to those employing a standard metallic adhesive. This is rationalized in terms of the large, well interconnected grains found in tetracene films deposited on substrates using the mercaptosilane adhesive. Our work represents a step forward in the understanding of physical processes at semiconductor/metal and semiconductor/dielectric interfaces in organic devices. (c) 2006 American Institute of Physics.

Organic light-emitting transistors using concentric source/drain electrodes on a molecular adhesion layer

Santato C;Cicoira F;Bonfiglio A;Muccini M;Zamboni R;
2006

Abstract

Bottom-contact tetracene light-emitting transistors employing a mercaptosilane derivative self-assembled monolayer as adhesive between gold concentric interdigitated source/drain electrodes and SiO2 gate dielectric are described. Devices that employ the mercaptosilane adhesive have a higher mobility and electroluminescence compared to those employing a standard metallic adhesive. This is rationalized in terms of the large, well interconnected grains found in tetracene films deposited on substrates using the mercaptosilane adhesive. Our work represents a step forward in the understanding of physical processes at semiconductor/metal and semiconductor/dielectric interfaces in organic devices. (c) 2006 American Institute of Physics.
2006
Istituto per lo Studio dei Materiali Nanostrutturati - ISMN
INFM
FIELD-EFFECT-TRANSISTOR
THIN-FILM TRANSISTORS
CONTACT RESISTANCE
GLASS
MORPHOLOGY
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/152246
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