Tunable band-stop and band-pass straight edge resonators (SER) on silicon membrane were obtained and characterized. S-parameters have been measured at different DC magnetic biasing fields showing a frequency tunability domain between 3 GHz and 9.5 GHz ca for band stop resonators and between 2 GHz and 7.5 GHz ca. for band pass resonators. An improvement of the performances for the SERs excited by micromachined microstrip transducers has been clearly demonstrated. The utilization of silicon membranes to support MSW-SERs offers important openings toward the integration of magnetostatic wave devices in microwave circuit with micromachined structures.
MSW resonators on micromachined silicon membrane
Marcelli R;
2003
Abstract
Tunable band-stop and band-pass straight edge resonators (SER) on silicon membrane were obtained and characterized. S-parameters have been measured at different DC magnetic biasing fields showing a frequency tunability domain between 3 GHz and 9.5 GHz ca for band stop resonators and between 2 GHz and 7.5 GHz ca. for band pass resonators. An improvement of the performances for the SERs excited by micromachined microstrip transducers has been clearly demonstrated. The utilization of silicon membranes to support MSW-SERs offers important openings toward the integration of magnetostatic wave devices in microwave circuit with micromachined structures.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
