Pulsed laser ablation has been utilized in our laboratory to deposit thin films of semiconducting oxides such as indium oxide and tin oxide. Deposition of these thin films has been carried out by a frequency doubled Nd-YAG laser ls532 nm. on silicon 100. substrates. A comparison has been performed, among indium oxide, tin oxide, and multilayers of indium and tin oxides, to evaluate their use as NO gas sensors. The influence of physical parameters, such as substrate temperature and laser fluence, on the velocity response of the films and on their resistance variation, has been investigated. The deposited films have been characterized by X-ray diffraction XRD. and electric resistance measurements.
Sensors based on pulsed laser deposition of multilayers of metal oxides
V Marotta;S Orlando;GP Parisi;
2000
Abstract
Pulsed laser ablation has been utilized in our laboratory to deposit thin films of semiconducting oxides such as indium oxide and tin oxide. Deposition of these thin films has been carried out by a frequency doubled Nd-YAG laser ls532 nm. on silicon 100. substrates. A comparison has been performed, among indium oxide, tin oxide, and multilayers of indium and tin oxides, to evaluate their use as NO gas sensors. The influence of physical parameters, such as substrate temperature and laser fluence, on the velocity response of the films and on their resistance variation, has been investigated. The deposited films have been characterized by X-ray diffraction XRD. and electric resistance measurements.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
