Aluminum nitride thin films have been fabricated by reaction of laser evaporated Al in a NH3 atmosphere. The results indicate that AlN may deposit on a suitable substrate in a hexagonal crystal structure. A fairly dense homogeneous texture of the film surface morphology is seen by scanning electron microscopy SEM.. The main process parameters to produce layers of this material have been investigated.
Polycrystalline aluminum nitride thin films prepared by laser assisted Al and NH3 reaction
V Marotta;S Orlando;A Santagata
1997
Abstract
Aluminum nitride thin films have been fabricated by reaction of laser evaporated Al in a NH3 atmosphere. The results indicate that AlN may deposit on a suitable substrate in a hexagonal crystal structure. A fairly dense homogeneous texture of the film surface morphology is seen by scanning electron microscopy SEM.. The main process parameters to produce layers of this material have been investigated.File in questo prodotto:
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