We compare the In content of quaternary InxGa1-xAs1-yNy and ternary InxGa1-xAs layers grown by plasma-assisted molecular beam epitaxy in similar conditions. Indium incorporation is found to decrease monotonically with increasing nitrogen content. The magnitude of the reduction strongly depends on N concentration, reaching about 20% of the nominal In content for N concentrations of y=0.044. (c) 2006 American Institute of Physics.
Nitrogen-induced hindering of in incorporation in InGaAsN
Rubini S;Modesti S;Carlino E;Martelli F;Franciosi A;
2006
Abstract
We compare the In content of quaternary InxGa1-xAs1-yNy and ternary InxGa1-xAs layers grown by plasma-assisted molecular beam epitaxy in similar conditions. Indium incorporation is found to decrease monotonically with increasing nitrogen content. The magnitude of the reduction strongly depends on N concentration, reaching about 20% of the nominal In content for N concentrations of y=0.044. (c) 2006 American Institute of Physics.File in questo prodotto:
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