Silicon nanowires (NW) were grown on Si substrates via a Vapour-Liquid-Solid mechanism by Low-Pressure Chemical Vapour Deposition (LPCVD) from a disilane source. The influence of the growth parameters such as metal amount, operating pressure and substrate temperature and preparation on the Si NW morphology and structure has been investigated by SEM and XPS.
Growth of Metal-Mediated Si Nanowires by LPCVD
SOrlando;
2005
Abstract
Silicon nanowires (NW) were grown on Si substrates via a Vapour-Liquid-Solid mechanism by Low-Pressure Chemical Vapour Deposition (LPCVD) from a disilane source. The influence of the growth parameters such as metal amount, operating pressure and substrate temperature and preparation on the Si NW morphology and structure has been investigated by SEM and XPS.File in questo prodotto:
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