We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature B350C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.
Photoluminescence Study of Low Thermal Budget III-V Nanostructures on Silicon by Droplet Epitaxy
A Fedorov
2010
Abstract
We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature B350C, thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits.File in questo prodotto:
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