Diamond thin films promise excellent performances in several high value applications such as high temperature and high frequency electronic devices, as electrode material in electrochemistry, and as a protective coating for components operating in aggressive environments. These interesting perspectives, however, are actually limited by the polycrystalline, randomly oriented morphology of CVD deposited films, which results in a noticeable surface roughness with some presence of pin holes. Many methods have been thed to polish diamond, the hardest known material; a very simple and effective one seems to be the irradiation with hizh energy pulsed lasers. The purpose of this work is to get a deeper insight into the interactions and effects of intense laser radiation on diamond, a wide band gap material, and to explore the optimal experimental conditions to smooth the surface roughness and eventually to fill in the pin-holes. HF-CVD deposited diaimnd films have been treated by radiations of energy values larger (ArF, A = 193 nm, hv 6.4 eV) and smaller (Nd:YAG, X = 532 nm, liv 2.3 eV) than the electronic energy gap (hv 5.4 eV). The surface morphology modifications have been studied by SEM. Raman spectroscopy was employed to evaluate some phase transition in the C component (diamond--> DLC--> graphite--> amorphous C).

Structural modifications of diamond films induced by pulsed laser treatment

E Cappelli;S Orlando;F Pinzari
1998

Abstract

Diamond thin films promise excellent performances in several high value applications such as high temperature and high frequency electronic devices, as electrode material in electrochemistry, and as a protective coating for components operating in aggressive environments. These interesting perspectives, however, are actually limited by the polycrystalline, randomly oriented morphology of CVD deposited films, which results in a noticeable surface roughness with some presence of pin holes. Many methods have been thed to polish diamond, the hardest known material; a very simple and effective one seems to be the irradiation with hizh energy pulsed lasers. The purpose of this work is to get a deeper insight into the interactions and effects of intense laser radiation on diamond, a wide band gap material, and to explore the optimal experimental conditions to smooth the surface roughness and eventually to fill in the pin-holes. HF-CVD deposited diaimnd films have been treated by radiations of energy values larger (ArF, A = 193 nm, hv 6.4 eV) and smaller (Nd:YAG, X = 532 nm, liv 2.3 eV) than the electronic energy gap (hv 5.4 eV). The surface morphology modifications have been studied by SEM. Raman spectroscopy was employed to evaluate some phase transition in the C component (diamond--> DLC--> graphite--> amorphous C).
1998
Inglese
editor Vladimir I. Pustovoy
ALT '97 International Conference on Laser Surface Processing
ALT '97 International Conference on Laser Surface Processing
178
186
9
0-8194-2855-8
SPIE-INT SOC OPTICAL ENGINEERING
BELLINGHAM, WA 98227-0010
STATI UNITI D'AMERICA
Sì, ma tipo non specificato
September 8-12, 1997
Limoges, France
Contributo pubblicato in: ALT '97 International Conference on Laser Surface Processing held in Limoges, France, September 8-12 1997, SPIE Proceedings Vol. 3404, editor Vladimir I. Pustovoy (SPIE - The International Society for Optical Engineering, Bellingham, WA, USA, 1998) SPIE Proceedings Vol. 3404 (1998) pp. 178-186ISSN: 0277-786XISBN: 0-8194-2855-8 doi:10.1117/12.308613
4
none
Ascarelli, P; Cappelli, E; Orlando, S; Pinzari, F
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/15818
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