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Pulsed laser ablation has been applied to thin films deposition from a tin selenide target. The growth of SnSe films has been analysed by electrical and optical techniques. The effect of laser fluence on the properties of the deposits has been also studied.

Epitaxial growth of thin films of SnSe semiconducting material

A Santagata;S Orlando
1996

Abstract

Pulsed laser ablation has been applied to thin films deposition from a tin selenide target. The growth of SnSe films has been analysed by electrical and optical techniques. The effect of laser fluence on the properties of the deposits has been also studied.
1996
Inglese
edited by Andre Tramer
Fast Elementary Processes in Chemical and Biological Systems
54th International Meeting of Physical Chemistry
562
567
6
1-56396-564-X
AIP, American institute of physics
Melville, NY
STATI UNITI D'AMERICA
Sì, ma tipo non specificato
June 26-30, 1995
Lille, Villeneuve d'Ascq, France
Contributo pubblicato in: Fast Elementary Processes in Chemical and Biological Systems - 54th International Meeting of Physical Chemistry held in Lille, Villeneuve d'Ascq, France, June 26-30 1995, AIP Conference Proceedings 364, edited by Andre Tramer, American Institute of Physics, Woodbury, New York, 1996, pp. 562-567.L.C. Catalog Card No. 96-83624ISBN: 1-56396-564-X
6
none
Teghil, R; Giardini Guidoni, A; Mele, A; Pizzella, G; Santagata, A; Orlando, S
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/15822
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