We fabricated field effect transistors which are transparent at visible wavelength, by realizing epitaxial ZnO/SrTiO3 heterostructures. High crystalline quality ZnO layers were grown by pulsed laser deposition on 110 oriented strontium titanate single crystals. By conventional photolithographic techniques we realized micrometric sized devices in both bottom-gate stacked layers geometry and planar side-gate configuration. Our transistors show 80% light transmittance, on/off ratios up to 10(6) and field effect mobilities up to 30 cm(2)/Vs at 77 K. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Crystalline ZnO/SrTiO3 transparent field effect transistor

Bellingeri E;Pallecchi I;Pellegrino L;Canu G;Vignolo M;
2008

Abstract

We fabricated field effect transistors which are transparent at visible wavelength, by realizing epitaxial ZnO/SrTiO3 heterostructures. High crystalline quality ZnO layers were grown by pulsed laser deposition on 110 oriented strontium titanate single crystals. By conventional photolithographic techniques we realized micrometric sized devices in both bottom-gate stacked layers geometry and planar side-gate configuration. Our transistors show 80% light transmittance, on/off ratios up to 10(6) and field effect mobilities up to 30 cm(2)/Vs at 77 K. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
2008
INFM
THIN-FILM TRANSISTORS
PULSED-LASER DEPOSITION
ZNO
FABRICATION
MOBILITY
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/158291
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