We fabricated field effect transistors which are transparent at visible wavelength, by realizing epitaxial ZnO/SrTiO3 heterostructures. High crystalline quality ZnO layers were grown by pulsed laser deposition on 110 oriented strontium titanate single crystals. By conventional photolithographic techniques we realized micrometric sized devices in both bottom-gate stacked layers geometry and planar side-gate configuration. Our transistors show 80% light transmittance, on/off ratios up to 10(6) and field effect mobilities up to 30 cm(2)/Vs at 77 K. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Crystalline ZnO/SrTiO3 transparent field effect transistor
Bellingeri E;Pallecchi I;Pellegrino L;Canu G;Vignolo M;
2008
Abstract
We fabricated field effect transistors which are transparent at visible wavelength, by realizing epitaxial ZnO/SrTiO3 heterostructures. High crystalline quality ZnO layers were grown by pulsed laser deposition on 110 oriented strontium titanate single crystals. By conventional photolithographic techniques we realized micrometric sized devices in both bottom-gate stacked layers geometry and planar side-gate configuration. Our transistors show 80% light transmittance, on/off ratios up to 10(6) and field effect mobilities up to 30 cm(2)/Vs at 77 K. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
prod_2818-doc_64632.pdf
solo utenti autorizzati
Descrizione: Crystalline ZnO/SrTiO3 transparent field effect transistor
Dimensione
322.17 kB
Formato
Adobe PDF
|
322.17 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.


