We present a detailed experimental investigation of transient currents in HfO2 capacitors in the short timescale. We show that the transient currents flowing through the capacitor plates when the gate voltage is reset to zero after a low voltage stress period follow a power-law time dependence t(-x) (with alpha similar or equal to 1) over more than eight decades of time and down to the mu s timescale. As transient currents in HfO2 are largely increased with respect to the SiO2 case, these results confirm that transient effects can be a severe issue for the successful integration of high-k dielectrics. (c) 2006 Elsevier B.V. All rights reserved.
Characterization of transient currents in HfO2 capacitors in the short timescale
Spiga S;
2006
Abstract
We present a detailed experimental investigation of transient currents in HfO2 capacitors in the short timescale. We show that the transient currents flowing through the capacitor plates when the gate voltage is reset to zero after a low voltage stress period follow a power-law time dependence t(-x) (with alpha similar or equal to 1) over more than eight decades of time and down to the mu s timescale. As transient currents in HfO2 are largely increased with respect to the SiO2 case, these results confirm that transient effects can be a severe issue for the successful integration of high-k dielectrics. (c) 2006 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
