We have investigated the ultrafast carrier dynamics in Molecular Beam Epitaxy (MBE)-grown InAs/InGaAs/GaAs quantum dots emitting at 1.3 mu m by means of time resolved photoluminescence upconversion measurements with a time resolution of about 200 fs. The detection energies scan the spectral region from the energy of the quantum dot excitonic transition up to the barrier layer absorption edge. We found, under high excitation intensity, that the intrinsic electronic states are populated mainly by carriers directly captured from the barrier. (C) 2007 Elsevier Ltd. All rights reserved.
Picosecond timescale carrier dynamics of InAs quantum dots: The role of a continuum background
Salhi A;Todaro M;Passaseo A;
2008
Abstract
We have investigated the ultrafast carrier dynamics in Molecular Beam Epitaxy (MBE)-grown InAs/InGaAs/GaAs quantum dots emitting at 1.3 mu m by means of time resolved photoluminescence upconversion measurements with a time resolution of about 200 fs. The detection energies scan the spectral region from the energy of the quantum dot excitonic transition up to the barrier layer absorption edge. We found, under high excitation intensity, that the intrinsic electronic states are populated mainly by carriers directly captured from the barrier. (C) 2007 Elsevier Ltd. All rights reserved.File in questo prodotto:
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