The design, synthesis and structure-property investigation of a new thienopyrrolyl dione substituted oligothiophene material showing reduced band gap energy, low lying LUMO energy level and ambipolar semiconducting behaviour is described.
Thienopyrrolyl dione end-capped oligothiophene ambipolar semiconductors for Thin Film- and Light Emitting Transistors
Melucci M;Zambianchi M;Favaretto L;Gazzano M;Zanelli A;Capelli R;Toffanin S;Muccini M
2011
Abstract
The design, synthesis and structure-property investigation of a new thienopyrrolyl dione substituted oligothiophene material showing reduced band gap energy, low lying LUMO energy level and ambipolar semiconducting behaviour is described.File in questo prodotto:
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