The fundamental reflectivity spectra for Zn1-xMnxTe mixed semiconducting compounds in the 0.5 - 10.0 eV energy range are presented. The energy positions of the reflectivity spectra structures versus manganese content are shifted linearly and blurred. These properties are likely caused by the deformation of the bands, a shift of the critical points in the BZ, the s-p-d repulsion interaction of s-p like Te valence band with Mn 3d states and the transitions from and to Mn 3d bands in ZnMnTe band structure
Zn1-xMnxTe fundamental reflectivity spectra in the 0.5-10.0 eV energy range
Zema N;
1989
Abstract
The fundamental reflectivity spectra for Zn1-xMnxTe mixed semiconducting compounds in the 0.5 - 10.0 eV energy range are presented. The energy positions of the reflectivity spectra structures versus manganese content are shifted linearly and blurred. These properties are likely caused by the deformation of the bands, a shift of the critical points in the BZ, the s-p-d repulsion interaction of s-p like Te valence band with Mn 3d states and the transitions from and to Mn 3d bands in ZnMnTe band structureFile in questo prodotto:
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