We have studied the room-temperature photo luminescence (PL) properties of freshly prepared and naturally oxidized porous silicon (p-Si) samples. The morphology and chemical composition of the p-Si samples are examined by means of scanning electron microscopy (SEM) and electron dispersion spectroscopy. Nanoscale pores are noticed in freshly prepared p-Si, with an average density of similar to 4 x 10(9) cm(-2). The surface-oxidation process in the p-Si is found to be slowly progressing in course of time. Using SEM, pores are not observed on the surface of the oxidized p-Si in plan-view geometry. A broad PL band consisting of multiple peaks together with the evolution of resorant peaks is evidenced in freshly prepared samples. A regular blue shift of the resonant peak energy is obtained with increasing excitation energy in all the p-Si samples. In addition, multiple peak structure is found slowly disappearing with increasing surface-oxide layer thickness followed by the gradual increment of the resonant PL intensity. (c) 2006 Elsevier B.V. All rights reserved.
Observation of room-temperature resonant photoluminescence in porous silicon
Kanjilal A;
2006
Abstract
We have studied the room-temperature photo luminescence (PL) properties of freshly prepared and naturally oxidized porous silicon (p-Si) samples. The morphology and chemical composition of the p-Si samples are examined by means of scanning electron microscopy (SEM) and electron dispersion spectroscopy. Nanoscale pores are noticed in freshly prepared p-Si, with an average density of similar to 4 x 10(9) cm(-2). The surface-oxidation process in the p-Si is found to be slowly progressing in course of time. Using SEM, pores are not observed on the surface of the oxidized p-Si in plan-view geometry. A broad PL band consisting of multiple peaks together with the evolution of resorant peaks is evidenced in freshly prepared samples. A regular blue shift of the resonant peak energy is obtained with increasing excitation energy in all the p-Si samples. In addition, multiple peak structure is found slowly disappearing with increasing surface-oxide layer thickness followed by the gradual increment of the resonant PL intensity. (c) 2006 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
