Magnetic and electronic transport properties of Mn-doped Ge films have been studied as a function of Mn content. The films exhibit a long-range ferromagnetic behavior and a Mn dilution-dependent Curie temperature T-C. Resistivity shows an insulator-like character with two distinct activation energies below about 80 K, while the Hall coefficient evidences a strong contribution from the anomalous Hall effect. in a p-type material. At a characteristic temperature T-R, resistivity experiences a sudden reduction and the Hall coefficient reverses its sign from positive to negative. Moreover, around T-R, any residual remanence and coercivity disappear. The transport and magnetic results are deeply related and can be qualitatively explained by a percolation model based on bound magnetic polarons due to localized holes in the GeMn alloy lattice. (c) 2005 Elsevier B.V. All rights reserved.

Magnetic and transport polaron percolation in diluted GeMn films

2006

Abstract

Magnetic and electronic transport properties of Mn-doped Ge films have been studied as a function of Mn content. The films exhibit a long-range ferromagnetic behavior and a Mn dilution-dependent Curie temperature T-C. Resistivity shows an insulator-like character with two distinct activation energies below about 80 K, while the Hall coefficient evidences a strong contribution from the anomalous Hall effect. in a p-type material. At a characteristic temperature T-R, resistivity experiences a sudden reduction and the Hall coefficient reverses its sign from positive to negative. Moreover, around T-R, any residual remanence and coercivity disappear. The transport and magnetic results are deeply related and can be qualitatively explained by a percolation model based on bound magnetic polarons due to localized holes in the GeMn alloy lattice. (c) 2005 Elsevier B.V. All rights reserved.
2006
INFM
SEMICONDUCTORS
FERROMAGNETISM
MNXGE1-X
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/160586
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