A hybrid superconductor-two-dimensional electron gas microdevice is presented. Its working principle is based on the suppression of Andreev reflection at the superconductor-semiconductor interface caused by a magnetic barrier generated by a ferromagnetic strip placed on top of the structure. Device switching is predicted with fields up to some mT and working frequencies of several GHz, making it promising for applications ranging from microswitches and storage cells to magnetic field discriminators. (c) 2006 American Institute of Physics.

Superconductor-semiconductor magnetic microswitch

Giazotto F;Taddei F;Beltram F
2006

Abstract

A hybrid superconductor-two-dimensional electron gas microdevice is presented. Its working principle is based on the suppression of Andreev reflection at the superconductor-semiconductor interface caused by a magnetic barrier generated by a ferromagnetic strip placed on top of the structure. Device switching is predicted with fields up to some mT and working frequencies of several GHz, making it promising for applications ranging from microswitches and storage cells to magnetic field discriminators. (c) 2006 American Institute of Physics.
2006
INFM
ANDREEV REFLECTION
CONDUCTANCE
JUNCTIONS
VALVE
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/160647
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