We report photoelectron diffraction (PED) experiments of weakly sub-stoichiometric TiO2(100) rutile surfaces. Apart from standardcore-level PED from the Ti-2p3/2 line, we have studied valence band PED from the defect induced Ti-3d states in the insulating band gap. For maximum yield, the latter were resonantly excited at the Ti-2p absorption edge. The PED patterns have been analyzed within the forward scattering approximation as well as by comparison with simulated PED patterns obtained in multiple scattering calculations. The analysis shows that the defect induced Ti-3d charge is mainly located on the second layer Ti atoms. (C) 2007 Elsevier B.V. All rights reserved.
Defects at the TiO2(100) surface probed by resonant photoelectron diffraction
Floreano L;Cossaro A;Verdini A;Morgante A
2007
Abstract
We report photoelectron diffraction (PED) experiments of weakly sub-stoichiometric TiO2(100) rutile surfaces. Apart from standardcore-level PED from the Ti-2p3/2 line, we have studied valence band PED from the defect induced Ti-3d states in the insulating band gap. For maximum yield, the latter were resonantly excited at the Ti-2p absorption edge. The PED patterns have been analyzed within the forward scattering approximation as well as by comparison with simulated PED patterns obtained in multiple scattering calculations. The analysis shows that the defect induced Ti-3d charge is mainly located on the second layer Ti atoms. (C) 2007 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
