We show that very large negative magnetoresistance can be obtained in magnetic trilayers in a current-in-plane geometry owing to the existence of crossed Andreev reflection. This spin valve consists of a thin superconducting film sandwiched between two ferromagnetic layers whose magnetization is allowed to be either parallelly or antiparallelly aligned. For a suitable choice of structure parameters and nearly fully spin-polarized ferromagnets, the magnetoresistance can exceed -80%. Our results are relevant for the design and implementation of spintronic devices exploiting ferromagnet-superconductor structures.
Crossed Andreev reflection-induced magnetoresistance
Giazotto F;Taddei F;Beltram F;
2006
Abstract
We show that very large negative magnetoresistance can be obtained in magnetic trilayers in a current-in-plane geometry owing to the existence of crossed Andreev reflection. This spin valve consists of a thin superconducting film sandwiched between two ferromagnetic layers whose magnetization is allowed to be either parallelly or antiparallelly aligned. For a suitable choice of structure parameters and nearly fully spin-polarized ferromagnets, the magnetoresistance can exceed -80%. Our results are relevant for the design and implementation of spintronic devices exploiting ferromagnet-superconductor structures.File in questo prodotto:
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