We consider an inverse problem which arises in the framework of identification of doping profiles for semiconductor devices, based on current measures for varying voltage. We set formally the inverse problem, and study and discuss the main properties of the resulting problem.
Inverse doping problems for a P-N junction
Torcicollo I;
2006
Abstract
We consider an inverse problem which arises in the framework of identification of doping profiles for semiconductor devices, based on current measures for varying voltage. We set formally the inverse problem, and study and discuss the main properties of the resulting problem.File in questo prodotto:
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