Single-crystalline nanowires of indium oxide were produced under controlled conditions via condensation from the vapor phase. Seeding of the substrate through dispersion of metallic indium nanoparticles was proven effective in promoting a nanowire nucleation driven by the vapor-solid process. Nanowires with as small an average lateral dimension as 110 nm were produced, allowing the exploitation of size reduction effects on the electrical properties and the response to gases. Preparation and microstructural and electrical characterization of nanowires are presented, and the peculiarities of these innovative structures for the development of nanodevices are highlighted.
Controlled growth and sensing properties of In2O3 nanowires
Vomiero A;Sberveglieri G
2007
Abstract
Single-crystalline nanowires of indium oxide were produced under controlled conditions via condensation from the vapor phase. Seeding of the substrate through dispersion of metallic indium nanoparticles was proven effective in promoting a nanowire nucleation driven by the vapor-solid process. Nanowires with as small an average lateral dimension as 110 nm were produced, allowing the exploitation of size reduction effects on the electrical properties and the response to gases. Preparation and microstructural and electrical characterization of nanowires are presented, and the peculiarities of these innovative structures for the development of nanodevices are highlighted.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
