The authors demonstrate direct electron-beam writing on conjugated polymers as patterning route to realize plastic optoelectronic devices. Lithography was carried out by a 20 kV electron beam dose in the range of 0-360 mu C/cm(2), with no need for masking or development/etching processes. The features could be employed for the fabrication of polymer distributed feedback lasers, exhibiting optically pumped lasing in the range of 607-620 nm, with a spectral linewidth around 1 nm and a threshold excitation fluence of 34 mu J/cm(2).

Organic-based distributed feedback lasers by direct electron-beam lithography on conjugated polymers

Camposeo A;Pisignano D
2007

Abstract

The authors demonstrate direct electron-beam writing on conjugated polymers as patterning route to realize plastic optoelectronic devices. Lithography was carried out by a 20 kV electron beam dose in the range of 0-360 mu C/cm(2), with no need for masking or development/etching processes. The features could be employed for the fabrication of polymer distributed feedback lasers, exhibiting optically pumped lasing in the range of 607-620 nm, with a spectral linewidth around 1 nm and a threshold excitation fluence of 34 mu J/cm(2).
2007
INFM
LIGHT-EMITTING-DIODES
SOLID-STATE LASERS
EMISSION
EFFICIENCY
CRYSTALS
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/161916
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