We demonstrate a method for the simultaneous fabrication (without the need of expensive e-beam systems) of large arrays of nanodevices working at room temperature. The electrode gap is defined by a selective wet-etching of a AlGaAs/GaAs quantum well structure and controlled with nanometer precision. A selective oxidation of the Al rich barrier reduces the bulk leakage current by six orders of magnitude and extends the applicability of the produced devices to room temperature functionality. As a demonstration, we employ here these nancjunctions to investigate transport in molecular tunnel-junctions based on individual Azurins, a blue copper protein, under ambient conditions. This approach opens the way to the fabrication of complex circuits consisting of different nanodevices. (c) 2007 Elsevier B.V. All rights reserved.

Fabrication and transport of large-scale molecular tunnel-junction arrays

Maruccio G;Krahne R;Della Torre A;Passaseo A;Rinaldi R
2007

Abstract

We demonstrate a method for the simultaneous fabrication (without the need of expensive e-beam systems) of large arrays of nanodevices working at room temperature. The electrode gap is defined by a selective wet-etching of a AlGaAs/GaAs quantum well structure and controlled with nanometer precision. A selective oxidation of the Al rich barrier reduces the bulk leakage current by six orders of magnitude and extends the applicability of the produced devices to room temperature functionality. As a demonstration, we employ here these nancjunctions to investigate transport in molecular tunnel-junctions based on individual Azurins, a blue copper protein, under ambient conditions. This approach opens the way to the fabrication of complex circuits consisting of different nanodevices. (c) 2007 Elsevier B.V. All rights reserved.
2007
Istituto di Nanotecnologia - NANOTEC
INFM
INFM
molecular electronics
nanofabrication
nanotechnology
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/161921
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