Surface and interface electronic properties of plasma-deposited hydrogenated amorphous silicon nitride films have been investigated by means of optical second harmonic generation (SHG) technique. Polarization analysis shows that the nonlinear field origins from isotropic interfaces (film/substrate interface and film/air interface) whose spectral features are ascribed to surface/interface Si dangling bonds and strained Si-Si bonds. Differences and similarities with SHG spectra of pure amorphous silicon (a-Si:H) are discussed in terms of compositional inhomogeneities of the ternary alloy.

Second harmonic generation analysis in hydrogenated amorphous silicon nitride thin films

Lettieri S;Maddalena P;
2007

Abstract

Surface and interface electronic properties of plasma-deposited hydrogenated amorphous silicon nitride films have been investigated by means of optical second harmonic generation (SHG) technique. Polarization analysis shows that the nonlinear field origins from isotropic interfaces (film/substrate interface and film/air interface) whose spectral features are ascribed to surface/interface Si dangling bonds and strained Si-Si bonds. Differences and similarities with SHG spectra of pure amorphous silicon (a-Si:H) are discussed in terms of compositional inhomogeneities of the ternary alloy.
2007
INFM
OPTICAL-ABSORPTION
INTERFACE STATES
SURFACE
DESORPTION
SI(100)2X1
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/162015
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? 12
social impact