In203 thin films were prepared by the sol-gel process, by using an indium oxide sol obtained through a chemical complexation modified process. XRD measurements performed on the film deposited onto glass substrates show that the crystallization of the oxide takes place after heating at 300°C in air and that the films prepared in this way have a smaller grain size than the films prepared with the traditional process. The gas sensing properties of the samples towards CO, NO2 and 03 were also analysed. The In203 thin films showed high response to NO2 and O3 and no cross sensitivity with CO.
Sol-Gel Synthesis and Gas Sensing Properties of In203 Thin Films
S Capone;M Epifani;G Faglia;R Rella;G Sberveglieri;P Siciliano
2001
Abstract
In203 thin films were prepared by the sol-gel process, by using an indium oxide sol obtained through a chemical complexation modified process. XRD measurements performed on the film deposited onto glass substrates show that the crystallization of the oxide takes place after heating at 300°C in air and that the films prepared in this way have a smaller grain size than the films prepared with the traditional process. The gas sensing properties of the samples towards CO, NO2 and 03 were also analysed. The In203 thin films showed high response to NO2 and O3 and no cross sensitivity with CO.File in questo prodotto:
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