In2O3 thin films were prepared by the sol-gel process, by using an indium oxide sol obtained through a chemical complexation modified process. XRD measurements performed on the film deposited onto glass substrates show that the crystallization of the oxide takes place after heating at 300°C in air and that the films prepared in this way have a smaller grain size than the films prepared with the traditional process. The gas sensing properties of the samples towards CO, NO2 and O3 were also analysed. The In2O3 thin films showed high response to NO2 and O3 and no cross sensitivity with CO.
In2O3 Thin Films Based Gas-Sensors for NO2 and O3 detection
S Capone;M Epifani;G Faglia;R Rella;G Sberveglieri;P Siciliano
2003
Abstract
In2O3 thin films were prepared by the sol-gel process, by using an indium oxide sol obtained through a chemical complexation modified process. XRD measurements performed on the film deposited onto glass substrates show that the crystallization of the oxide takes place after heating at 300°C in air and that the films prepared in this way have a smaller grain size than the films prepared with the traditional process. The gas sensing properties of the samples towards CO, NO2 and O3 were also analysed. The In2O3 thin films showed high response to NO2 and O3 and no cross sensitivity with CO.File in questo prodotto:
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