Material aspects of heterostructural Si/CeO2 fabricated as buffered substrates for sputtered YBCO films, are studied by means of X-ray diffraction, AFM, Raman and SIMS-ToF analysis. Different Si/CeO2 layouts are chosen and tri-layers Si/CeO2/YBCO grown on the respective bi-layer substrates, are preliminary analyzed. Outstanding material issues suggest that in the framework of sputtering technology, epitaxy is out of reach for Si/CeO2/YBCO multi-layers. However, the results point towards the scalability/integrability of the technology with silicon processing when the main target consists of networking for integrated electronics.
Characterization of Si-CeO2-YBCO Tri-layers Grown by Magnetron Sputtering
Camerlingo C;Tallarida G;
2003
Abstract
Material aspects of heterostructural Si/CeO2 fabricated as buffered substrates for sputtered YBCO films, are studied by means of X-ray diffraction, AFM, Raman and SIMS-ToF analysis. Different Si/CeO2 layouts are chosen and tri-layers Si/CeO2/YBCO grown on the respective bi-layer substrates, are preliminary analyzed. Outstanding material issues suggest that in the framework of sputtering technology, epitaxy is out of reach for Si/CeO2/YBCO multi-layers. However, the results point towards the scalability/integrability of the technology with silicon processing when the main target consists of networking for integrated electronics.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
