We propose a direct nanopatterning process of hybrid sol-gel materials useful for photonics application. A specific organic-inorganic film based on 3-glycidoxypropyltrimethoxysilane with epoxy rings acting as silica network modifier and sensitive to radiation has been developed, with a controlled inorganic crosslinking degree and an almost total absence of organic polymerization. The film has been exposed to electron beam or X-ray synchrotron radiation. Both the interactions induce the polymerization of the organic part of the film generating its hardening after post exposure baking. The exposed material becomes insoluble determining a negative-resist like behaviour: the nanolithographic process results from the dissolution of the un-exposed areas in proper solvents. After its optimization unexpected spatial resolution of the pattern were achieved with structures below 200 nm sized, both with electron beam and X-ray lithography. The real advantages of this approach are that almost all the significant parameters for a photonic device (refractive index, light absorption and emission) can be tailored during the material synthesis and with a single lithographic step the device is ready without any further etching process, undoubtedly simplifying the photonic devices nanofabrication. A demonstration test has been performed doping the film with commercial Rhodamine 6G that after the exposure didn't degraded its luminescence efficiency. (c) 2006 Elsevier B.V. All rights reserved.

Direct nanopattern of hybrid sol-gel films

Romanato F
2007

Abstract

We propose a direct nanopatterning process of hybrid sol-gel materials useful for photonics application. A specific organic-inorganic film based on 3-glycidoxypropyltrimethoxysilane with epoxy rings acting as silica network modifier and sensitive to radiation has been developed, with a controlled inorganic crosslinking degree and an almost total absence of organic polymerization. The film has been exposed to electron beam or X-ray synchrotron radiation. Both the interactions induce the polymerization of the organic part of the film generating its hardening after post exposure baking. The exposed material becomes insoluble determining a negative-resist like behaviour: the nanolithographic process results from the dissolution of the un-exposed areas in proper solvents. After its optimization unexpected spatial resolution of the pattern were achieved with structures below 200 nm sized, both with electron beam and X-ray lithography. The real advantages of this approach are that almost all the significant parameters for a photonic device (refractive index, light absorption and emission) can be tailored during the material synthesis and with a single lithographic step the device is ready without any further etching process, undoubtedly simplifying the photonic devices nanofabrication. A demonstration test has been performed doping the film with commercial Rhodamine 6G that after the exposure didn't degraded its luminescence efficiency. (c) 2006 Elsevier B.V. All rights reserved.
2007
INFM
LITHOGRAPHY
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/164926
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