In this paper, the photoexcitation response of high mobility n-type organic field-effect transistors is analyzed. White light exposure of N,N'-dioctyl-3,4,9,10-perylene tetracarboxylic diimide PTCDI-C8H transistors is demonstrated to promote the occurrence of metastable conductance states with very long retention times, similar to what has been previously reported for p-type compounds. Even in the absence of a gate-source voltage VGS, the complete recovery of the initial electrical condition can take up to 20 days. However, the initial state restoring is electrically controllable by the application of a positive VGS. These effects suggest that PTCDI-C8H is an interesting n-type material for the development of light-sensitive organic circuitry.

Photoinduced long-term memory effects in n-type organic perylene transistors

Barra M;Bloisi F;Cassinese A;Vicari L
2009

Abstract

In this paper, the photoexcitation response of high mobility n-type organic field-effect transistors is analyzed. White light exposure of N,N'-dioctyl-3,4,9,10-perylene tetracarboxylic diimide PTCDI-C8H transistors is demonstrated to promote the occurrence of metastable conductance states with very long retention times, similar to what has been previously reported for p-type compounds. Even in the absence of a gate-source voltage VGS, the complete recovery of the initial electrical condition can take up to 20 days. However, the initial state restoring is electrically controllable by the application of a positive VGS. These effects suggest that PTCDI-C8H is an interesting n-type material for the development of light-sensitive organic circuitry.
2009
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN
organic transistors
n-type
light-sensitive memory effects
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/165181
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