Conductive atomic force microscopy has been used to measure the I-V characteristics of nanometric An clusters embedded in a SiO2 film prepared by sputter deposition and low temperature annealing. Highly local asymmetric rectifier I-V characteristics were evidenced and modelled in terms of electrical transport through an asymmetric double barrier tunnel junction SiO2/Au cluster/SiO2. The threshold voltage depends strongly on the cluster size and barrier thickness according to the model given. (c) 2006 Elsevier B.V. All rights reserved.
Structural and electrical characterization of gold nanoclusters in thin SiO2 films: Realization of a nanoscale tunnel rectifier
2007
Abstract
Conductive atomic force microscopy has been used to measure the I-V characteristics of nanometric An clusters embedded in a SiO2 film prepared by sputter deposition and low temperature annealing. Highly local asymmetric rectifier I-V characteristics were evidenced and modelled in terms of electrical transport through an asymmetric double barrier tunnel junction SiO2/Au cluster/SiO2. The threshold voltage depends strongly on the cluster size and barrier thickness according to the model given. (c) 2006 Elsevier B.V. All rights reserved.File in questo prodotto:
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