GST chalcogenides based alloys are considered as one of the main candidates for the development of non-volatile memories innovative technologies. In particular, the switching behaviour between crystalline and amorphous phases of Ge2Sb2Te5 has been attracted much interest for commercial use applications. In this work the amorphization kinetics of Ge2Sb2Te5 during ion irradiation are examined. We reported relevant experimental observations concerning the kinetics of order-disorder phase transition related to the ion beam induced amorphization in GST layer and the models to describe the process. The relationship between the phase transition and reflectivity variation of crystalline Ge2Sb2Te5 films after bombardment with Ar+ ions is investigated with particular emphasis on the effects of ion energy, fluence and implant temperature. (c) 2007 Elsevier B.V. All rights reserved.
Amorphization kinetics of Ge2Sb2Te5 thin film induced by ion implantation
2007
Abstract
GST chalcogenides based alloys are considered as one of the main candidates for the development of non-volatile memories innovative technologies. In particular, the switching behaviour between crystalline and amorphous phases of Ge2Sb2Te5 has been attracted much interest for commercial use applications. In this work the amorphization kinetics of Ge2Sb2Te5 during ion irradiation are examined. We reported relevant experimental observations concerning the kinetics of order-disorder phase transition related to the ion beam induced amorphization in GST layer and the models to describe the process. The relationship between the phase transition and reflectivity variation of crystalline Ge2Sb2Te5 films after bombardment with Ar+ ions is investigated with particular emphasis on the effects of ion energy, fluence and implant temperature. (c) 2007 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
