In this invited paper of the 28th International Conference of the Physics of Semiconductors (ICPS-28), we discuss the peculiar quantum electrodynamical properties of a semiconductor microcavity system, in which a cavity photon mode is strongly coupled to an intersubband transition of a doped quantum well system. In this kind of semiconductor system, it is possible to achieve an unprecedented ultrastrong coupling regime, in which the vacuum Rabi frequency is comparable to the electronic transition frequency. We discuss the anomalous quantum properties of the quantum ground state (a squeezed vacuum) and of the intersubband cavity polariton excitations. We address the role of dissipation and point out some future perspectives concerning the investigation of quantum vacuum radiation effects induced by an ultrafast time modulation of the quantum vacuum.

On the ultrastrong vacuum Rabi coupling of an intersubband transition in a semiconductor microcavity

Carusotto I
2007

Abstract

In this invited paper of the 28th International Conference of the Physics of Semiconductors (ICPS-28), we discuss the peculiar quantum electrodynamical properties of a semiconductor microcavity system, in which a cavity photon mode is strongly coupled to an intersubband transition of a doped quantum well system. In this kind of semiconductor system, it is possible to achieve an unprecedented ultrastrong coupling regime, in which the vacuum Rabi frequency is comparable to the electronic transition frequency. We discuss the anomalous quantum properties of the quantum ground state (a squeezed vacuum) and of the intersubband cavity polariton excitations. We address the role of dissipation and point out some future perspectives concerning the investigation of quantum vacuum radiation effects induced by an ultrafast time modulation of the quantum vacuum.
2007
INFM
SINGLE QUANTUM-DOT
CAVITY
WELLS
File in questo prodotto:
File Dimensione Formato  
prod_1633-doc_39193.pdf

non disponibili

Descrizione: On the ultrastrong vacuum Rabi coupling of an intersubband transition in a semiconductor microcavity
Tipologia: Versione Editoriale (PDF)
Licenza: NON PUBBLICO - Accesso privato/ristretto
Dimensione 484.86 kB
Formato Adobe PDF
484.86 kB Adobe PDF   Visualizza/Apri   Richiedi una copia

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/166141
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 6
  • ???jsp.display-item.citation.isi??? 6
social impact