We demonstrate a gradual surface modification process of relaxed Si0.5Ge0.5 alloy films by 100 MeV An beam with fluence varying between 5 x 10(10) and I X 10(12) ions/cm(2) at 80 K by means of atomic force microscopy (AFM). Presence of Ge quantum dots (QDs) was found in the virgin sample. The disappearance of the QDs were noticed when the samples were irradiated with a fluence of 5 x 10(10) ions/cm(2). Craters were found developing at a fluence of I x 10(11) ions/cm(2). Apart from the evolution of the craters, blisters were also detected at a fluence of I X 10(12) ions/cm(2). Variation of the average root mean square value of the surface roughness as a function of fluence was examined. (c) 2006 Elsevier B.V. All rights reserved.
Impact of 100 MeV Au on the surface of relaxed Si0.5Ge0.5 alloy films studied by atomic force microscopy
Kanjilal A;
2006
Abstract
We demonstrate a gradual surface modification process of relaxed Si0.5Ge0.5 alloy films by 100 MeV An beam with fluence varying between 5 x 10(10) and I X 10(12) ions/cm(2) at 80 K by means of atomic force microscopy (AFM). Presence of Ge quantum dots (QDs) was found in the virgin sample. The disappearance of the QDs were noticed when the samples were irradiated with a fluence of 5 x 10(10) ions/cm(2). Craters were found developing at a fluence of I x 10(11) ions/cm(2). Apart from the evolution of the craters, blisters were also detected at a fluence of I X 10(12) ions/cm(2). Variation of the average root mean square value of the surface roughness as a function of fluence was examined. (c) 2006 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
