Silicon nitride layers grown on Si (111) by atomic nitrogen exposure at elevated substrate temperatures have been investigated in situ by photoemission spectro-microsopy. From the X-ray photo emission spectra taken at various sample areas, the chemical composition of samples grown at 800 degreesC is found to be homogenous all over the surface, with a stoichiometry according to Si3N4. Due to attenuation of the photo electrons, the images also provide information about the morphology of the nitride films. For 800 degreesC, a smooth film is observed, whereas for growth temperatures exceeding 900 degreesC, an increased roughness is observed.
Spectro-microscopy of ultra-thin SiN films on Si (111)
2003
Abstract
Silicon nitride layers grown on Si (111) by atomic nitrogen exposure at elevated substrate temperatures have been investigated in situ by photoemission spectro-microsopy. From the X-ray photo emission spectra taken at various sample areas, the chemical composition of samples grown at 800 degreesC is found to be homogenous all over the surface, with a stoichiometry according to Si3N4. Due to attenuation of the photo electrons, the images also provide information about the morphology of the nitride films. For 800 degreesC, a smooth film is observed, whereas for growth temperatures exceeding 900 degreesC, an increased roughness is observed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
