We present first principles calculations of Mn-doped GaN/A1N(0001) heterostructures obtained within the framework of density functional theory by using plane wave pseudopotential techniques. We found that for diluted Mn concentration this system present an integer magnetization that is a fingerprint of half-metallic property; this suggests the possibility to use this junction as a spin injector. (c) 2006 Elsevier Ltd. All rights reserved.
Mn-doped GaN/AlN heterojunction for spintronic devices
Debernardi A
2006
Abstract
We present first principles calculations of Mn-doped GaN/A1N(0001) heterostructures obtained within the framework of density functional theory by using plane wave pseudopotential techniques. We found that for diluted Mn concentration this system present an integer magnetization that is a fingerprint of half-metallic property; this suggests the possibility to use this junction as a spin injector. (c) 2006 Elsevier Ltd. All rights reserved.File in questo prodotto:
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