An investigation of the structural, magnetic and electronic properties of H 3 nm thick Mn5Ge3 films epitaxially grown on a Ge(1 1 1)-c(2 × 8) reconstructed surface is reported. High resolution transmission electron microscopy and selected area electron diffraction give evidence of 2.2% in-plane compressive strain between the Mn5Ge3 film and the Ge substrate. Magnetooptical Kerr effect measurements show that the films are ferromagnetic with a Curie temperature of H 325 K. The analysis of Ge 3d core level photoelectron spectra of the Mn5Ge3 films allows determining an upper limit of 76 meV for the Ge 3d5/2 core-hole lifetime broadening. The Ge 3d3/2 core-hole lifetime broadening is found to be 15 meV larger than that of the Ge 3d5/2 core hole, because of the existence of a Coster–Kronig decay channel due to the metallic character of Mn5Ge3.

Mn5Ge3 films grown on Ge(1 1 1)-c(2 × 8)

Olivieri B;Perfetti P;Quaresima C;Ottaviani C;
2011

Abstract

An investigation of the structural, magnetic and electronic properties of H 3 nm thick Mn5Ge3 films epitaxially grown on a Ge(1 1 1)-c(2 × 8) reconstructed surface is reported. High resolution transmission electron microscopy and selected area electron diffraction give evidence of 2.2% in-plane compressive strain between the Mn5Ge3 film and the Ge substrate. Magnetooptical Kerr effect measurements show that the films are ferromagnetic with a Curie temperature of H 325 K. The analysis of Ge 3d core level photoelectron spectra of the Mn5Ge3 films allows determining an upper limit of 76 meV for the Ge 3d5/2 core-hole lifetime broadening. The Ge 3d3/2 core-hole lifetime broadening is found to be 15 meV larger than that of the Ge 3d5/2 core hole, because of the existence of a Coster–Kronig decay channel due to the metallic character of Mn5Ge3.
2011
Istituto di Scienze dell'Atmosfera e del Clima - ISAC
Istituto di Struttura della Materia - ISM - Sede Roma Tor Vergata
Metal-semiconductor magnetic thin film structure
Mn5Ge3
Electron microscopy
Transmission high-energy electron diffraction
Synchrotron radiation photoelectron spectroscopy
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/169563
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