We present novel low-field magnetoresistive devices based on the ferromagnetic manganite La0.7Sr0.3MnO3 operating in the current in plane (CIP) configuration. In these planar spin-valve devices, a focused Ga+ beam is used to create pinning centers for magnetic domain walls. The spin-dependent scattering of polarized electrons at the domain walls (DW) is responsible for the magnetoresistance observed in the patterned tracks. The magneto-transport properties of these devices are interpreted within a model for DW magnetoresistance. Applications such as magnetic data storage can be envisaged for the structures we investigated. (C) 2006 Elsevier B.V. All rights reserved.
Novel low field magnetoresistive devices based on manganites
MilettoGranozio F;Pepe GP;
2007
Abstract
We present novel low-field magnetoresistive devices based on the ferromagnetic manganite La0.7Sr0.3MnO3 operating in the current in plane (CIP) configuration. In these planar spin-valve devices, a focused Ga+ beam is used to create pinning centers for magnetic domain walls. The spin-dependent scattering of polarized electrons at the domain walls (DW) is responsible for the magnetoresistance observed in the patterned tracks. The magneto-transport properties of these devices are interpreted within a model for DW magnetoresistance. Applications such as magnetic data storage can be envisaged for the structures we investigated. (C) 2006 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
