In this paper, we report on pressure sensors based on completely flexible organic thin film transistors (OTFTs). A flexible and transparent plastic foil (Mylar) is employed both as substrate and gate dielectric. Gold source and drain electrodes are patterned on the upper side of the foil while the gate electrode lies on the opposite side; a vacuum-sublimed pentacene film is used as active layer. The pressure dependence of the output current has been investigated by applying to the gate side of the device a mechanical stimulus by means of a pressurized airflow. Experimental results show a reversible dependence of the current on the pressure. The data analysis suggests that the current variations are due to pressure-induced variations of mobility, threshold voltage and possibly contact resistance. The drain current variation is reproducible, linear and reversible even though it displays a hysteresis. Moreover, the sensor responds very fast to the mechanical stimulus (i.e. within tens-hundreds of milliseconds) but the time required to reach the steady state is much higher (tens-hundreds of seconds). Electrical characteristics with and without applied pressure have been carried out in air without any extra ad hoc read-out circuit or equipment. The reported devices show potential advantages of flexibility of the structure, low cost andversatility of the device structure for sensor technologies. Many innovative and attractive applications as wearable electronics, e-textiles, e-skin for robots can be considered. (c) 2007 Elsevier B.V. All rights reserved.
Pressure sensing using a completely flexible organic transistor
Bonfiglio A
2007
Abstract
In this paper, we report on pressure sensors based on completely flexible organic thin film transistors (OTFTs). A flexible and transparent plastic foil (Mylar) is employed both as substrate and gate dielectric. Gold source and drain electrodes are patterned on the upper side of the foil while the gate electrode lies on the opposite side; a vacuum-sublimed pentacene film is used as active layer. The pressure dependence of the output current has been investigated by applying to the gate side of the device a mechanical stimulus by means of a pressurized airflow. Experimental results show a reversible dependence of the current on the pressure. The data analysis suggests that the current variations are due to pressure-induced variations of mobility, threshold voltage and possibly contact resistance. The drain current variation is reproducible, linear and reversible even though it displays a hysteresis. Moreover, the sensor responds very fast to the mechanical stimulus (i.e. within tens-hundreds of milliseconds) but the time required to reach the steady state is much higher (tens-hundreds of seconds). Electrical characteristics with and without applied pressure have been carried out in air without any extra ad hoc read-out circuit or equipment. The reported devices show potential advantages of flexibility of the structure, low cost andversatility of the device structure for sensor technologies. Many innovative and attractive applications as wearable electronics, e-textiles, e-skin for robots can be considered. (c) 2007 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
