In this paper, we propose an analytical model for the electrical behavior of cylindrical thin-film transistors. A comparative analysis with planar devices is carried on, focusing on the dimension of the layers composing the device to determine major differences between the two geometries. Finally, the model is validated with experimental results.

An analytical model for cylindrical thin-film transistors

Bonfiglio A
2007

Abstract

In this paper, we propose an analytical model for the electrical behavior of cylindrical thin-film transistors. A comparative analysis with planar devices is carried on, focusing on the dimension of the layers composing the device to determine major differences between the two geometries. Finally, the model is validated with experimental results.
2007
INFM
FIELD-EFFECT TRANSISTORS
THRESHOLD VOLTAGE
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/169921
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