We present a theory of full counting statistics for electron transport through interacting electron systems with non-Markovian dynamics. We illustrate our approach for transport through a single-level quantum dot and a metallic single-electron transistor to second order in the tunnel coupling, and discuss under which circumstances non-Markovian effects appear in the transport properties.

Full counting statistics in strongly interacting systems: Non-Markovian effects

Braggio A;Fazio R
2006

Abstract

We present a theory of full counting statistics for electron transport through interacting electron systems with non-Markovian dynamics. We illustrate our approach for transport through a single-level quantum dot and a metallic single-electron transistor to second order in the tunnel coupling, and discuss under which circumstances non-Markovian effects appear in the transport properties.
2006
INFM
SINGLE-ELECTRON TRANSISTOR
ZERO-BIAS ANOMALIES
QUANTUM SHOT-NOISE
CHARGE
TRANSPORT
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/170152
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