We calculate the optical absorption spectra of prototype (6,6) and (9,9) BN nanotubes in the presence of a perpendicular electric field. This model mimics a gated BN nanotube device. Even though the band-gap of the tubes decreases strongly as a function of the electric field strength, the absorption spectrum of the pure tubes remains remarkably constant up to high field-strength. We show that, in contrast, the levels which are responsible for defect-mediated photo-luminescence are shifted by the electric field. We address the use of BN nanotubes for optoelectronic applications. 0 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Absorption of BN nanotubes under the influence of a perpendicular electric field

Marini A;
2007

Abstract

We calculate the optical absorption spectra of prototype (6,6) and (9,9) BN nanotubes in the presence of a perpendicular electric field. This model mimics a gated BN nanotube device. Even though the band-gap of the tubes decreases strongly as a function of the electric field strength, the absorption spectrum of the pure tubes remains remarkably constant up to high field-strength. We show that, in contrast, the levels which are responsible for defect-mediated photo-luminescence are shifted by the electric field. We address the use of BN nanotubes for optoelectronic applications. 0 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
2007
INFM
BORON-NITRIDE NANOTUBES
CARBON
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/170745
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