We deposited Si on GaAs (100) and (111) at 450 degrees C to 550 degrees C. On GaAs(100)-(2 x 4) and -(4 x 2) the Si grows in bilayer mode with single domain (1 x 2) and (2 x 1) reconstructions, respectively. The films are pseudomorphic up to a critical thickness of 10ML. SrF2, deposited on Si/GaAs(100) at 550 degrees C, grows with a rough surface due to (111) facets. On GaAs(111) A and B the Si grows epitaxially without any superstructure. The films are pseudomorphic up to a critical thickness of 5ML. It is remarkable that SrF2 deposited at 550 degrees C on Si/GaAs(lll)grows in A-type with a high epitaxial duality, whereas SrF2 on bulk Si grows in B-type.
The influence of an ultrathin pseudomorphic interface control layer of Si on the growth of SrF2 on GaAs
1996
Abstract
We deposited Si on GaAs (100) and (111) at 450 degrees C to 550 degrees C. On GaAs(100)-(2 x 4) and -(4 x 2) the Si grows in bilayer mode with single domain (1 x 2) and (2 x 1) reconstructions, respectively. The films are pseudomorphic up to a critical thickness of 10ML. SrF2, deposited on Si/GaAs(100) at 550 degrees C, grows with a rough surface due to (111) facets. On GaAs(111) A and B the Si grows epitaxially without any superstructure. The films are pseudomorphic up to a critical thickness of 5ML. It is remarkable that SrF2 deposited at 550 degrees C on Si/GaAs(lll)grows in A-type with a high epitaxial duality, whereas SrF2 on bulk Si grows in B-type.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
