We studied the growth of SrF2 on InP(111) by reflection high-energy electron diffraction (RHEED). This paper compares the surface and bulk crystalline structures of 35 Angstrom thick SrF2 grown on two InP(111) surfaces prepared in different ways. HF-etching of the InP(111) substrate resulted in a rough surface, whereas an As-treatment produced a flat surface without any superstructure. After being annealed at 500 degrees C for 10 min the SrF2 film deposited on the HF-etched surface showed a texture, whereas the film deposited on the As-treated InP(111) surface uas epitaxial and even had no twinning.
MORPHOLOGY OF THIN SRF2 FILMS ON INP(111) STUDIED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION
HEUN S HEUN S;
1995
Abstract
We studied the growth of SrF2 on InP(111) by reflection high-energy electron diffraction (RHEED). This paper compares the surface and bulk crystalline structures of 35 Angstrom thick SrF2 grown on two InP(111) surfaces prepared in different ways. HF-etching of the InP(111) substrate resulted in a rough surface, whereas an As-treatment produced a flat surface without any superstructure. After being annealed at 500 degrees C for 10 min the SrF2 film deposited on the HF-etched surface showed a texture, whereas the film deposited on the As-treated InP(111) surface uas epitaxial and even had no twinning.File in questo prodotto:
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