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By electrical measurements we investigate the charge trapping and the charge transport in MOS capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers.

Nanocrystal MOS with silicon-rich oxide

Crupi I;Fazio B;
2002

Abstract

By electrical measurements we investigate the charge trapping and the charge transport in MOS capacitors in which the gate oxide has been replaced with a silicon rich oxide (SRO) film sandwiched between two thin SiO2 layers.
2002
Istituto per la Microelettronica e Microsistemi - IMM
Gettering and Defect Engineering in Semiconductor Technology
82-84
675
680
3-908450-64-0
7
none
Crupi, I; Lombardo, S; Gerardi, C; Fazio, B; Vulpio, M; Rimini, E; Melanotte, M
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/171871
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