The codeposition of In+As alloys has been investigated as a preliminary step for the preparation of thin polycrystalline InAs and InAsxP1-x films. Alloys of composition ranging from large excess In to excess As could be obtained by a suitable choice of bath and deposition conditions. Stoichiometric 1:1 deposits have been converted to InAs by simple thermal treatment. In+As alloys with excess In annealed under PH3 flow resulted in deposits consisting of two phases, an InAsxP1-x phase with x in the range 0.25 to 1 and and almost pure InP. Photoelectrochemical investigations showed that only the latter species was photoactive.
Electrodeposition of In + As thin film alloys and their conversion to InAsxP1-x by PH3 treatment
Cattarin S;Musiani M;Casellato U;Guerriero P;Rossetto G
1996
Abstract
The codeposition of In+As alloys has been investigated as a preliminary step for the preparation of thin polycrystalline InAs and InAsxP1-x films. Alloys of composition ranging from large excess In to excess As could be obtained by a suitable choice of bath and deposition conditions. Stoichiometric 1:1 deposits have been converted to InAs by simple thermal treatment. In+As alloys with excess In annealed under PH3 flow resulted in deposits consisting of two phases, an InAsxP1-x phase with x in the range 0.25 to 1 and and almost pure InP. Photoelectrochemical investigations showed that only the latter species was photoactive.| File | Dimensione | Formato | |
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Descrizione: Electrodeposition of In + As thin film alloys and their conversion to InAsxP1-x by PH3 treatment
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