Single shot laser annealing was utilized to crystallize GD-deposited amorphous silicon films. No explosive emission of hydrogen was detected for 2% laser beam spatial homogeneity. Computer simulation correctly predicts the melting threshold, but points out that the process is not described by pure heat flow calculation.
A study on excimer laser amorphous silicon film crystallization
1991
Abstract
Single shot laser annealing was utilized to crystallize GD-deposited amorphous silicon films. No explosive emission of hydrogen was detected for 2% laser beam spatial homogeneity. Computer simulation correctly predicts the melting threshold, but points out that the process is not described by pure heat flow calculation.File in questo prodotto:
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