The epitaxial growth was controlled by the oxygen partial pressure (p(O2)), the substrate temperature T(s) and the laser fluence E during the deposition. Thin films deposited under the optimum conditions (p(O2) = 25 Pa; T(s) = 750-degrees-C; E = 2 J cm-2) show a critical temperature close to 91 K and a transition width less than 1 K regardless of the substrate used. X-ray diffraction analysis shows that the films are highly c axis oriented with a very low mosaic spread. Preliminary measurements performed at 17 K show that the critical current density reaches values over 2 x 10(7) A cm-2 for a sample grown on LaAlO3 under proper deposition conditions
Laser deposition of YBCO monocrystalline thin films on different substrates
1992
Abstract
The epitaxial growth was controlled by the oxygen partial pressure (p(O2)), the substrate temperature T(s) and the laser fluence E during the deposition. Thin films deposited under the optimum conditions (p(O2) = 25 Pa; T(s) = 750-degrees-C; E = 2 J cm-2) show a critical temperature close to 91 K and a transition width less than 1 K regardless of the substrate used. X-ray diffraction analysis shows that the films are highly c axis oriented with a very low mosaic spread. Preliminary measurements performed at 17 K show that the critical current density reaches values over 2 x 10(7) A cm-2 for a sample grown on LaAlO3 under proper deposition conditionsI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
