Amorphous Si films deposited by the low pressure chemical vapor deposition from disilane, and subsequently subjected to a combined furnace annealing at 600 °C/12 h and a sequential excimer laser annealing, results to polycrystalline silicon films with very large grains, low in-grain defect density, and smooth-free surface. Large but heavily defected grains are produced by the furnace annealing, the in-grain defects are mainly microtwins, which are eliminated by a combined liquid- solid state process induced by the laser annealing. The two-step annealing provides a very high quality polycrystalline material suitable for thin-film transistor application.
Microstructure of polycrystalline silicon films obtained by combined furnace and laser annealing
1995
Abstract
Amorphous Si films deposited by the low pressure chemical vapor deposition from disilane, and subsequently subjected to a combined furnace annealing at 600 °C/12 h and a sequential excimer laser annealing, results to polycrystalline silicon films with very large grains, low in-grain defect density, and smooth-free surface. Large but heavily defected grains are produced by the furnace annealing, the in-grain defects are mainly microtwins, which are eliminated by a combined liquid- solid state process induced by the laser annealing. The two-step annealing provides a very high quality polycrystalline material suitable for thin-film transistor application.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
