ZrxTi1-xO4 (ZT) thin films have been deposited by pulsed laser deposition (PLD) and metallo-organic chemical vapour deposition (MOCVD) on Pt-covered and naked Si(100) substrates. Both techniques provide single-phased films with a columnar structure when the substrate is heated to the 500-600degreesC range. Out of this temperature range the co-existence of other titanium oxides has been shown by XRD and XPS studies. XPS results show that the composition of optimized films is constant along the film thickness and that PLD films have higher Zr concentration than MOCVD ones. Pt induces the orientation (111) of ZT films, while the higher temperature promotes either (020) ZT orientation in PLD films or (031) ZT texture in MOCVD ones.
Comparison of ZrxTi1-xO4 films produced by PLD and MOCVD techniques
S Kaciulis;G Padeletti;
2004
Abstract
ZrxTi1-xO4 (ZT) thin films have been deposited by pulsed laser deposition (PLD) and metallo-organic chemical vapour deposition (MOCVD) on Pt-covered and naked Si(100) substrates. Both techniques provide single-phased films with a columnar structure when the substrate is heated to the 500-600degreesC range. Out of this temperature range the co-existence of other titanium oxides has been shown by XRD and XPS studies. XPS results show that the composition of optimized films is constant along the film thickness and that PLD films have higher Zr concentration than MOCVD ones. Pt induces the orientation (111) of ZT films, while the higher temperature promotes either (020) ZT orientation in PLD films or (031) ZT texture in MOCVD ones.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
