Amorphous silicon nitride a-SiNx (0<=x<=1.6) thin films, prepared by dual ion beam sputtering, were investigated by means of high energy resolution XPS. The contribution of Si0Si4-n Nn(n=0···4) configurations to the total Si2p level was determined. The nitrogen-induced chemical shift and broadening of Si2p core level were evaluated respectively as 0.6 and 0.22 ev per attached nitrogen. Artifacts due to Ar-ion sputtering are also discussed.
XPS INVESTIGATION ON AMORPHOUS SILICON NITRIDE (a-SINX) CHEMICAL-STRUCTURE
GM Ingo;
1988
Abstract
Amorphous silicon nitride a-SiNx (0<=x<=1.6) thin films, prepared by dual ion beam sputtering, were investigated by means of high energy resolution XPS. The contribution of Si0Si4-n Nn(n=0···4) configurations to the total Si2p level was determined. The nitrogen-induced chemical shift and broadening of Si2p core level were evaluated respectively as 0.6 and 0.22 ev per attached nitrogen. Artifacts due to Ar-ion sputtering are also discussed.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
